Εργαστήριο χαρακτηρισμού υλικών με τεχνικές απορρόφησης ακτίνων Χ

Τμήμα Φυσικής - Τομέας Φυσικής Στερεάς Κατάστασης

Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης -54124 Θεσσαλονίκη
Τel. & Fax: 2310 998936 e-mail: paloura@auth.gr

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Η ακτινοβολία Σύγχροτρον


Δημοσιεύσεις που αφορούν το χαρακτηρισμό υλικών σε διατάξεις παραγωγής ακτινοβολίας Σύγχροτρον

 

Δημοσιεύσεις σε διεθνή περιοδικά και πρακτικά διεθνών συνεδρίων

 

Χαρακτηρισμός υμενίων νιτριδίων του πυριτίου

 

XAFS characterization of buried SixNyOz samplesF. Pinakidou., M. Katsikini, E. C. Paloura, Nuclear Instruments and Methods in Physics Research B, 200, 66 (2003).

 

"Evolution of the signature of nitrogen related defects in the x-ray absorption spectra of N-rich SiNx:H films", E. C. Paloura, J. Kanicki, Proc. 194th Meeting of the ECS, 98-22, 316 (1999).

An X-ray absorption study of SixNyOz films”, E. C. Paloura, M. Katsikini, A. Markwitz, R. W. Michelmann, Proceedings of the Electrochemical Society, 98-22, 327 (1999).

Dose- and annealing-induced changes in the microstructure of buried SiNx:An x-ray absorption study” E. C. Paloura, J. Appl. Phys.83, 5804 (1998).

 

“Electron beam induced damage in N-rich SiNx films deposited by plasma enhanced chemical vapor deposition” Ch. B. Lioutas, N. Vouroutzis, E. C. Paloura, Y. Kuo, Thin Solid Films 296, 28 (1997).

 

“Evolution of defect-related structure in the X-ray absorption spectra of buried SiNx films” E. C. Paloura, Appl. Phys. Lett. 71, 3209 (1997).

 

Microstructural characterization of stoichiometric buried Si3N4 filmsE. C. Paloura, A. Ginoudi, A. Markwitz, Ch. Lioutas, M. Katsikini, K. Bethge, S. Aminpirooz, H. Rossner, E. Holub-Krappe, T. Zorba, D. Siapkas , Nucl. Instr. & Methods B 113, 227 (1996)

 

“The effect of ion implantation in the microstructure of Si3N4 films: an X-Ray absorption study” E. C. Paloura, A. Mertens, K. Holldack, Nucl. Instr. & Methods B 113, 231 (1996).

 

“Characterization of stoichiometric surface and buried SiN films fabricated by ion implantation using extended X-ray absorption fine structure” E. C. Paloura, C. Lioutas and A. Markwitz, J. Appl. Phys. 80, 2720 (1996).

 

“Microstructure modifications induced by bonded hydrogen in N-rich SiNx:H films” E. C. Paloura, Ch. Lioutas, N. Vouroutzis, W. M. Arnoldbik, F. H. P. M. Habraken, Y. Kuo, J. Appl. Phys, 80, 5742 (1996).

Characterization of nearly stoichiometric buried Si3N4 films with EXAFS and NEXAFS” E. C. Paloura, A. Mertens, P. Grekos and W. Frentrup, Proc., NATO ASI Series E, Vol. 283, 661 (1995).

“On the effect of bonded hydrogen in the local microstructure of PECVD SiNx:H films” E. C. Paloura, Y. Kyo and W. Braun,  Physica B 208&209, 562 (1995).

 

“Characterization of buried SiNx films with EXAFS and NEXAFS” E. C. Paloura, A. Mertens, W. Frentrup, U. Döbler, A. Knop and W. Braun, Physica B  208&209, 509 (1995).

 

On the identification of N-dangling bonds in SiN films using X-ray absorption studies” E. C. Paloura, A. Knop, K. Holldack, U. Döbler and S. Logothetidis, J. Appl. Phys. 73, 2995 (1993).

 

“Comparative studies of SiN thin films with conventional and synchrotron radiation ellipsometry” J. Petalas, S. Logothetidis, A. Markwitz, E. C. Paloura, R. L. Johnson and D. Fuchs, Physica B 185, 342 (1993).

 “On the contribution of a nitrogen-related defect in the NEXAFS spectra of thin Si3N4 films” E. C. Paloura, A. Knop, U. Döbler, K. Holldack and S. Logothetidis, Proc. Fall MRS symposium, p. 107 (1992).

 

 

Χαρακτηρισμός ΙΙΙ-V νιτριδίων (GaN, AlN, InN)

 

Microstructural characterization of InxGa1-xN MBE samples” M. Katsikini, E. C. Paloura, F. Boscherini, F. D’ Acapito, C. B. Lioutas. D. Doppalapudi, Nuclear Instruments and Methods in Physics Research B, 200, 116 (2003).

 

NEXAFS and AFM characterization of Si implanted GaNM. Katsikini, F. Pinakidou, N. Vouroutzis, R. Mitdank, A. Markwitz, E. C. Paloura, Nuclear Instruments and Methods in Physics Research B, 200, 120 (2003).

 

Identification of implantation - induced defects in GaN: A near–edge x-ray absorption fine structureM. Katsikini, F. Pinakidou, E. C. Paloura, W. Wesch, Applied Physics Letters, 82, 1556 (2003).

 

Study of group-III binary and ternary nitrides using near edge X-ray absorption measurements”, M. Katsikini, E. C. Paloura, T. D. Moustakas, Journal of Crystall Growth, 230/3-4, 405 (2001).

 

Ion implantation effects on the microhardness and microstructure of GaN”, P. Kavouras, M. Katsikini, N. Vouroutzis, C. B. Lioutas, E. C. Paloura, J. Antonopoulos, Th. Karakostas, P. Bressler, Journal of Crystal Growth, 230/3-4, 454 (2001)

 

Nitrogen K-edge X-ray absorption measurements on N and O implanted GaN”, M. Katsikini, E. C. Paloura, J. Bollmann, E. Holub-Krappe, W. T. Masselink, Journal of Electron Spectroscopy and Related Phenomena, 101-103, 689 (1999).

 

Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides”, M. Katsikini, E. C. Paloura, M. Fieber-Erdmann, E. Holub-Krappe, D. Korakakis, T. D. Moustakas, Journal of Electron Spectroscopy and Related Phenomena 101-103, 695 (1999).

 

On the effect of ion implantation in the microstructure of GaN: A XAFS study”, M. Katsikini, J. Bollmann, W. T. Masselink, E. C. Paloura, Journal of Synchrotron Radiation, 6, 552 (1999).

 

Nitrogen K-edge EXAFS measurements on Mg and Si doped GaN”, M. Katsikini, T. D. Moustakas, E. C. Paloura, Journal of Synchrotron Radiation 6, 555 (1999).

 

Gallium K-edge EXAFS measurements on cubic and hexagonal GaN” M. Katsikini, H. Rossner, E. Holub-Krappe, T. D. Moustakas, E. C. Paloura, , Journal of Synchrotron Radiation 6, 561 (1999).

 

Nitrogen K-edge NEXAFS measurements on Group-III binary and ternary nitrides”, M. Katsikini, M. Fieber-Erdmann, E. Holub-Krappe, D. Korakakis, T. D. Moustakas, E. C. Paloura, Journal of Synchrotron Radiation 6, 558 (1999).

 

NEXAFS and EXAFS studies of GaN and its alloys”, M. Katsikini, E. C. Paloura, Proceedings of the Electrochemical Society, 98-18, 64 (1999).

 

“Experimental determination of the N p-partial density of states in the conduction band of GaN: Determination of the polytype fractions in mixed phase samples” M. Katsikini, E. C. Paloura, T. D. Moustakas, J. Appl. Phys.83, 1437 (1998).

 

The effect of Si and Mg doping in the microstructure of epitaxially grown GaN” M. Katsikini, E. C. Paloura, M. Fieber-Erdmann, E. Holub-Krappe, T. D. Moustakas, Proc. Mat. Res. Soc. Symp. 482, 381 (1998).

 

“Identification of the cubic and hexagonal polytypes of GaN with X-ray absorption measurements” M. Katsikini, E. C. Paloura, T. S. Cheng, C. T. Foxon, Diamond & Related Materials 6, 1539 (1997).

 

“N- and Al-K-edge EXAFS of AlN grown on GaAs by MBE” M. Katsikini, E. C. Paloura, E. Holub-Krappe, T. S. Cheng, C. T. Foxon, J. de Physique IV 7, C2-1127 (1997).

 

“Angle resolved NEXAFS spectra of hexagonal and cubic GaN” M. Katsikini, E. C. Paloura, T. S. Cheng, C. T. Foxon, J. de Physique IV.7, C2-1129 (1997).

 

“Determination of the local microstructure of epitaxially grown AlN using X-ray absorption measurements” M. Katsikini, E. C. Paloura, T. S. Cheng, C. T. Foxon, J. Appl. Phys. 82, 1166 (1997).

 

“N-K-edge X-ray absorption study of heteroepitaxial GaN films", M. Katsikini, E. C. Paloura, M. Fieber-Erdmann, J. Kalomiros, T. D. Moustakas, H. Amano, I. Akasaki, Phys. Rev. B 56, 13380 (1997).

 

Determination of the percentage of the cubic and hexagonal phases in GaN with NEXAFS” M. Katsikini, E. C. Paloura, T.D. Moustakas, E. Holub-Krappe and J. Antonopoulos, Proc. Mat. Res. Soc. Vol. 449, 411 (1997).

N-K-edge EXAFS study of epitaxial GaN films” M. Katsikini, E. C. Paloura, M. Fieber-Erdmann, T.D. Moustakas, H. Amano, I. Akasaki, Proc. Mat. Res. Soc. Vol. 449, 459 (1997).

“Application of near-edge X-ray absorption fine structure for the identification of hexagonal and cubic polytypes in epitaxial GaN” M. Katsikini, E. C. Paloura, T. D. Moustakas, Appl. Phys. Lett. 69, 4206 (1996).

 “Angular dependence of the NEXAFS structure in hexagonal and cubic GaN” M.Katsikini, E.C.Paloura, J.Kalomiros, T. Moustakas, Proc. 23d Int. Conf. on the Physics of Semiconductors, Vol.1, p. 573, Ed. M. Scheffler and R. Zimmermann, World Scientific (1996).

 

Χαρακτηρισμός υαλοποιημένων στερεών αποβλήτων

 

XAFS studies on vitrified industrial wastes”, F. Pinakidou, M.Katsikini, E.C.Paloura, P. Kavouras, Ph. Komninou, Th. Karakostas, A. Erko, Physica Scripta (in press) 

 

 

Χαρακτηρισμός μαγνητικών υλικών

 

"Interface magnetism in 3d/5d multilayers probed by x-ray magnetic circular dichroism", F. Wilhelm, P. Poulopoulos, A.Scherz, H. Wende, K. Baberschke, M. Angelakeris, N.K. Flevaris, J. Goulon, A. Rogalev, Phys.Stat.Sol. (a) 196, 33 (2003).

 

"Systematics of the induced magnetic moments in 5d layers and the violation of the third Hund's rule: Reply to the Comment of R. Tyer et al.", F. Wilhelm, P. Poulopoulos, H. Wende, A. Scherz, K.Baberschke, M. Angelakeris, N.K. Flevaris and A. Rogale, Phys. Rev. Lett. 90, 129702 (2003).

 

"X-ray magnetic circular dichroic magnetometry on Ni/Pt multilayers", P. Poulopoulos, F. Wilhelm, H. Wende, G. Ceballos, K. Baberschke, D. Benea, H. Ebert, M. Angelakeris, N.K. Flevaris, A. Rogalev and N.B. Brookes, J. Appl. Phys. 89, 3874 (2001)

 

"Systematics of the induced magnetic moments in 5d layers and the violation of the third Hund’s rule", F. Wilhelm, P. Poulopoulos, H. Wende, A. Scherz, K. Baberschke, M. Angelakeris, N.K. Flevaris and A. Rogalev, Phys. Rev. Lett. 87, 207202 (2001).

 

"Magnetic anisotropy and the anisotropy of the orbital moment of Ni in Ni/Pt multilayers", F. Wilhelm, P. Poulopoulos, P. Srivastava, H. Wende, M. Farle, K. Baberschke, M. Angelakeris, N.K. Flevaris, W. Grange, J.-P. Kappler, G. Ghiringhelli and N.B. Brookes, Phys. Rev. B61, 8647 (2000).

 

"Layer-resolved magnetic moments in Ni/Pt multilayers", F. Wilhelm, P. Poulopoulos, G. Ceballos, H. Wende, K. Baberschke, P. Srivastava, D. Benea, H. Ebert, M. Angelakeris, N.K. Flevaris, D. Niarchos, A. Rogalev and N.B. Brookes, Phys. Rev. Lett. 85, 413 (2000).

 

 

 

Δημοσιεύσεις σε επετηρίδες εργαστηρίων παραγωγής ακτινοβολίας Σύγχροτρον

 

Absorption study of differently prepared Silicon Nitrides” A. Knop, U. Döbler, E. C. Paloura, S. Logothetidis and D. R. Batchelor, BESSY Jahresbericht p. 234 (1990).

 

On the identification of N-dangling bonds in SiN films using X-ray absorption studies” E. C. Paloura, A. Knop, U. Döbler,  K. Holldack and S. Logothetidis, BESSY Jahresbericht p. 224 (1991).

 

Comparative study of SiN thin films with synchrotron radiation ellipsometry” S. Logothetidis, J. Petalas, S. Boultadakis, A. Markowitz, E. C. Paloura, R. L. Johnson and D. Fuchs, BESSY Jahresbericht p. 227 (1991).

 

Detection of stoichiometry deviation in SixOyNz films using NEXAFS and spectroscopic ellipsometry” E. C. Paloura, S. Logothetidis, J. Petalas, A. Markwitz, A. Knop and P. Grekos, BESSY Jahresbericht p. 383 (1992).

 

On the formation of buried SixNy films in Si: A NEXAFS study” E. C. Paloura, A. Knop, A. Mertens, W. Frentrup, U. Döbler, K. Holldack and P. Grekos, BESSY Jahresbericht  p.389 (1992).

 

Calibration of the concentration of N-interstitials in thin Si3N4 films using NEXAFS” E. C. Paloura, A. Knop, K. Holldack, U. Döbler, A. Mertens and W. Frentrup, BESSY Jahresbericht p. 377 (1992).

 

Lateral and in-depth characterization of Si-nitride layers” K. Holldack, M. Grunze, M. Kinzler, H. Kerkow, A. Mertens, W. Frentrup, A. Knop, U. Döbler, E. Paloura and W. Gudat, BESSY Jahresbericht p.380 (1992).

 

The effect of hydrogen in the local atomic coordination in H-rich PECVD SiN films” E. C. Paloura and Y. Kuo, BESSY Jahresbericht p.376 (1993).

 

An X-ray absorption study of N-rich SixNy films formed by low-energy ion-implantation” E. C. Paloura, A. Markwitz, A. Knop, BESSY Jahresbericht p.374 (1993).

 

Characterization of buried SixNy films with EXAFS” E. C. Paloura, P. Grekos, A. Mertens, W. Frentrup, M. Spiropulu, BESSY Jahresbericht p.378 (1993).

 

Characterization of stoichiometric buried Si3N4 films by EXAFS and NEXAFS” E. C. Paloura, A. Ginoudi, A. Markwitz,M. Katsikini, A. Aminpirooz, H. Rossner, E. Holub-Krappe, E. Hatzikraniotis, BESSY Jahresbericht p.364 (1994).

 

Optical properties of thin, ex-situ hydrogenated SiC films” C. Janowitz, J. Kalomiros, A. Ginoudi, E. C. Paloura, R. L. Johnson, BESSY Jahresbericht p.437 (1995).

 

“Angular dependence of the NEXAFS structure in hexagonal and cubic GaN” M. Katsikini, E. C. Paloura, J. Kalomiros, P. Bressler, T. D. Moustakas, BESSY Jahresbericht p.250 (1995).

 

“N-K-edge EXAFS of AlN grown by ECR-MBE” M. Katsikini, E. C. Paloura, A. Ginoudi, E. Holub-Krappe, A. Christou, BESSY Jahresbericht p.248 (1995).

 

N- and Al- K-edge EXAFS on AlN grown on GaAs by MBE” M. Katsikini, E. C. Paloura, E. Houb-Krappe, T. S. Cheng, C. T. Foxon, BESSY Jahresbericht p.237 (1996).

 

Angle resolved NEXAFS spectra of hexagonal and cubic GaN” M. Katsikini, E. C. Paloura, T. S. Cheng, C. T. Foxon, BESSY Jahresbericht p.250 (1996).

 

Ga K-edge NEXAFS measurements on epitaxially grown GaN” M. Katsikini, E. C. Paloura, H. Rossner, M. Fieber-Erdmann, E. Houb-Krappe, T. D. Moustakas, HASYLAB Jahresbereicht p. 530 (1997).

 

Microstructure distortions in GaN identified with Ga K-edge EXAFS” M. Katsikini, E. C. Paloura, E. Houb-Krappe, M. Fieber-Erdmann, T. D. Moustakas, HASYLAB Jahresbereicht p.527 (1997).

 

“Evolution and thermal stability of defect-related structure in the NEXAFS spectra of SiNx films” E. C. Paloura, BESSY Jahresbericht  p.423 (1997).

 

An EXAFS study of vacancy-induced local distortions in GaN”, M. Katsikini, E. C. Paloura, M. Fieber-Erdmann, H. Rossner, E. Holub-Krappe, T. D. Moustakas, BESSY Yearbook, p. 224 (1997).

 

Study of AlxGa1-xN and InyGa1-yN alloys using N K-edge NEXAFS”, M. Katsikini, E. C. Paloura, M. Fieber-Erdmann, E. Holub-Krappe, H. Rossner, D. Korakakis, T. D. Moustakas, BESSY Yearbook, p. 230 (1997).

 

The effect of light ion implantation in the microstructure of GaN”, M. Katsikini, E. C. Paloura, J. Bollmann, W. T. Masselink, BESSY Yearbook, p. 225 (1998).

 

Nitrogen K-edge NEXAFS measurements on N and O implanted GaN”, M. Katsikini, E. C. Paloura, J. Bollmann, E. Holub-Krappe, W. T. Masselink, BESSY Yearbook, p. 227 (1998).

 

Ν K-edge EXAFS spectra of GaN recorded at the SX700 monochromator at BESSY-I and BESSY-II”, M. Katsikini, E. C. Paloura, P. Bressler, H. Gundlach, T. Kachel, BESSY Yearbook, p. 222 (1999).

 

"XAFS measurements on InGaN alloys", M. Katsikini, E. Paloura, F. Boscherini, F. D’Acapito, ESRF Yearbook p. 316 (1999).

 

"N K-edge EXAFS characterization of AlxGa1-xN samples", M. Katsikini, E. C. Paloura, T. D. Moustakas, H. Amano, I. Akasaki, BESSY Yearbook, p. 139 (2000).

 

"N K and O K edge EXAFS characterization of SiOxNy samples" F. Pinakidou, M. Katsikini, E. C. Paloura, BESSY Yearbook, p. 226 (2001).

 

"Amorphization and defect formation in Si implanted GaN: A NEXAFS study" M. Katsikini, F. Pinakidou, E. C. Paloura, BESSY Yearbook, p. 224 (2001).

 

"Fe K and Pb L3 NEXAFS characterization on glasses containing industrial wastes" F. Pinakidou, M. Katsikini, E. C. Paloura, P. Kavouras, Ph. Komninou, Th. Karakostas, A. Erko , BESSY Yearbook, p. 246 (2002).

 

"Identification of implantation induced defects in GaN: A NEXAFS study" M. Katsikini, F. Pinakidou, E. C. Paloura, W. Wesch, BESSY Yearbook, p. 248 (2002).